2SB1427T100E Overview
In this device, the DC current gain is 390 @ 500mA 6V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 1A.For high efficiency, the continuous collector voltage must be kept at -2A.The base voltage of the emitter can be kept at -6V to achieve high efficiency.Its current rating is -2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.90MHz is present in the transition frequency.A breakdown input voltage of 20V volts can be used.A maximum collector current of 2A volts is possible.
2SB1427T100E Features
the DC current gain for this device is 390 @ 500mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 1A
the emitter base voltage is kept at -6V
the current rating of this device is -2A
a transition frequency of 90MHz
2SB1427T100E Applications
There are a lot of ROHM Semiconductor 2SB1427T100E applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
