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BC859C,235

  • BC859C,235
  • BC859C,235

BC859C,235

BC859C,235

Nexperia USA Inc.

BC859C,235 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BC859C,235 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOW NOISE
Max Power Dissipation 250mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 30
Base Part Number BC859
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 250mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 30V
Transition Frequency 100MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 5V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.03000 $0.03
500 $0.0297 $14.85
1000 $0.0294 $29.4
1500 $0.0291 $43.65
2000 $0.0288 $57.6
2500 $0.0285 $71.25
BC859C,235 Product Details

BC859C,235 Overview


DC current gain in this device equals 420 @ 2mA 5V, which is the ratio of the base current to the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.Emitter base voltages of 5V can achieve high levels of efficiency.As a result, the part has a transition frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

BC859C,235 Features


the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BC859C,235 Applications


There are a lot of Nexperia USA Inc. BC859C,235 applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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