2N5302 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
2N5302 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Package / Case
TO-3
Number of Pins
3
Packaging
Bulk
Published
2002
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
TIN LEAD
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Subcategory
Other Transistors
Max Power Dissipation
5W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Pin Count
2
JESD-30 Code
O-MBFM-P2
Number of Elements
1
Polarity
NPN
Configuration
SINGLE
Power Dissipation
5W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
30A
Transition Frequency
2MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
DC Current Gain-Min (hFE)
5
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$52.25220
$5225.22
2N5302 Product Details
2N5302 Overview
A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.The part has a transition frequency of 2MHz.The maximum collector current is 30A volts.
2N5302 Features
the emitter base voltage is kept at 5V a transition frequency of 2MHz
2N5302 Applications
There are a lot of Microsemi Corporation 2N5302 applications of single BJT transistors.