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2N5302

2N5302

2N5302

Microsemi Corporation

2N5302 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N5302 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Package / Case TO-3
Number of Pins 3
PackagingBulk
Published 2002
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Operating Temperature200°C
Min Operating Temperature -65°C
Subcategory Other Transistors
Max Power Dissipation5W
Terminal Position BOTTOM
Terminal FormPIN/PEG
Pin Count2
JESD-30 Code O-MBFM-P2
Number of Elements 1
Polarity NPN
Configuration SINGLE
Power Dissipation5W
Case Connection COLLECTOR
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 30A
Transition Frequency 2MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
DC Current Gain-Min (hFE) 5
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:176 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$52.25220$5225.22

2N5302 Product Details

2N5302 Overview


A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.The part has a transition frequency of 2MHz.The maximum collector current is 30A volts.

2N5302 Features


the emitter base voltage is kept at 5V
a transition frequency of 2MHz

2N5302 Applications


There are a lot of Microsemi Corporation 2N5302 applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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