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2SD1835S

2SD1835S

2SD1835S

ON Semiconductor

2SD1835S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SD1835S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Operating Temperature150°C TJ
PackagingBulk
Published 2013
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Max Power Dissipation750mW
Base Part Number 2SD1835
Pin Count3
Power - Max 750mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 1A
Collector Emitter Breakdown Voltage50V
Frequency - Transition 150MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:54748 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.306891$0.306891
10$0.289520$2.8952
100$0.273132$27.3132
500$0.257672$128.836
1000$0.243087$243.087

2SD1835S Product Details

2SD1835S Overview


This device has a DC current gain of 140 @ 100mA 2V, which is the ratio between the base current and the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Emitter base voltages of 6V can achieve high levels of efficiency.In extreme cases, the collector current can be as low as 2A volts.

2SD1835S Features


the DC current gain for this device is 140 @ 100mA 2V
the vce saturation(Max) is 400mV @ 50mA, 1A
the emitter base voltage is kept at 6V

2SD1835S Applications


There are a lot of ON Semiconductor 2SD1835S applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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