2SD1835S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SD1835S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2013
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Max Power Dissipation
750mW
Base Part Number
2SD1835
Pin Count
3
Power - Max
750mW
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400mV
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 50mA, 1A
Collector Emitter Breakdown Voltage
50V
Frequency - Transition
150MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.306891
$0.306891
10
$0.289520
$2.8952
100
$0.273132
$27.3132
500
$0.257672
$128.836
1000
$0.243087
$243.087
2SD1835S Product Details
2SD1835S Overview
This device has a DC current gain of 140 @ 100mA 2V, which is the ratio between the base current and the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Emitter base voltages of 6V can achieve high levels of efficiency.In extreme cases, the collector current can be as low as 2A volts.
2SD1835S Features
the DC current gain for this device is 140 @ 100mA 2V the vce saturation(Max) is 400mV @ 50mA, 1A the emitter base voltage is kept at 6V
2SD1835S Applications
There are a lot of ON Semiconductor 2SD1835S applications of single BJT transistors.