2N2907AUB Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1.6V allows maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.6V @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Product comes in UB supplier package.This device displays a 60V maximum voltage - Collector Emitter Breakdown.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.
2N2907AUB Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of UB
2N2907AUB Applications
There are a lot of Microsemi Corporation 2N2907AUB applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
