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BCP54-10TF

BCP54-10TF

BCP54-10TF

Nexperia USA Inc.

BCP54-10TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BCP54-10TF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Part Status Active
Pin Count 4
Power - Max 1.3W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 155MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.09000 $0.09
500 $0.0891 $44.55
1000 $0.0882 $88.2
1500 $0.0873 $130.95
2000 $0.0864 $172.8
2500 $0.0855 $213.75
BCP54-10TF Product Details

BCP54-10TF Overview


In this device, the DC current gain is 63 @ 150mA 2V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Detection of Collector Emitter Breakdown at 45V maximal voltage is present.

BCP54-10TF Features


the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA

BCP54-10TF Applications


There are a lot of Nexperia USA Inc. BCP54-10TF applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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