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PMBT5551,235

  • PMBT5551,235
  • PMBT5551,235

PMBT5551,235

PMBT5551,235

Nexperia USA Inc.

PMBT5551,235 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PMBT5551,235 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 250mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 300MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number PMBT5551
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 250mW
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 160V
Max Collector Current 300mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 160V
Transition Frequency 100MHz
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) 6V
VCEsat-Max 0.2 V
Collector-Base Capacitance-Max 6pF
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.244440 $0.24444
10 $0.230604 $2.30604
100 $0.217551 $21.7551
500 $0.205237 $102.6185
1000 $0.193619 $193.619
PMBT5551,235 Product Details

PMBT5551,235 Overview


DC current gain in this device equals 80 @ 10mA 5V, which is the ratio of the base current to the collector current.When VCE saturation is 200mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 100MHz.During maximum operation, collector current can be as low as 300mA volts.

PMBT5551,235 Features


the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

PMBT5551,235 Applications


There are a lot of Nexperia USA Inc. PMBT5551,235 applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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