MJD5731T4G Overview
In this device, the DC current gain is 30 @ 300mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 200mA, 1A.Emitter base voltages of 5V can achieve high levels of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).The part has a transition frequency of 10MHz.An input voltage of 350V volts is the breakdown voltage.When collector current reaches its maximum, it can reach 1A volts.
MJD5731T4G Features
the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 10MHz
MJD5731T4G Applications
There are a lot of ON Semiconductor MJD5731T4G applications of single BJT transistors.
- Inverter
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- Interface
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- Muting
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- Driver
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