TIP117 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
TIP117 Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220AB
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1999
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Voltage - Rated DC
-100V
Max Power Dissipation
2W
Current Rating
-2A
Base Part Number
TIP11*
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
2W
Power - Max
2W
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 1A 4V
Current - Collector Cutoff (Max)
2mA
Vce Saturation (Max) @ Ib, Ic
2.5V @ 8mA, 2A
Collector Emitter Breakdown Voltage
100V
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
2A
Collector Emitter Saturation Voltage
2.5V
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
2A
Height
9.4mm
Length
10.67mm
Width
4.83mm
RoHS Status
Non-RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.151821
$0.151821
10
$0.143227
$1.43227
100
$0.135120
$13.512
500
$0.127472
$63.736
1000
$0.120256
$120.256
TIP117 Product Details
Description
The TIP117 is a TO220 type silicon PNP Darlington transistor designed for general purpose amplifier and low-speed switching applications. As to the classification of TIP117, one n-type material is doped with two p-type materials in a PNP transistor. It is an electronic gadget that is controlled by current. The modest quantity of base current regulated both the emitter and collector currents. In the PNP transistor, two crystal diodes are coupled back-to-back.
Features
? High DC Current Gain ?
hFE = 2500 (Typ) @ IC
= 1.0 Adc
? Collector?Emitter Sustaining Voltage ? @ 30 mAdc
VCEO(sus)= 100 Vdc (Min)
? Low Collector?Emitter Saturation Voltage ?
VCE(sat) = 2.5 Vdc (Max) @ IC
= 2.0 Adc
? Built-in Base-Emitter Shunt Resistors in Monolithic Construction