BC807-25,215 Overview

This device has a DC current gain of 160 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -700mV.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).With the emitter base voltage set at -5V, an efficient operation can be achieved.In this part, there is a transition frequency of 100MHz.Single BJT transistor shows a 45V maximal voltage - Collector EmSingle BJT transistorter Breakdown.A maximum collector current of -500mA volts is possible.

BC807-25,215 Features

the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz

BC807-25,215 Applications

There are a lot of Nexperia USA Inc. BC807-25,215 applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter