2N2369A PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
2N2369A PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mounting Type
Through Hole
Package / Case
TO-206AA, TO-18-3 Metal Can
Surface Mount
NO
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
MATTE TIN OVER NICKEL
Subcategory
Other Transistors
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Configuration
Single
Power - Max
360mW
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 10mA 350mV
Current - Collector Cutoff (Max)
400nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
15V
Current - Collector (Ic) (Max)
200mA
Transition Frequency
500MHz
Frequency - Transition
500MHz
Power Dissipation-Max (Abs)
0.36W
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.154000
$2.154
10
$2.032075
$20.32075
100
$1.917052
$191.7052
500
$1.808540
$904.27
1000
$1.706170
$1706.17
2N2369A PBFREE Product Details
2N2369A PBFREE Overview
DC current gain in this device equals 40 @ 10mA 350mV, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 10mA, 100mA.Parts of this part have transition frequencies of 500MHz.Device displays Collector Emitter Breakdown (15V maximal voltage).
2N2369A PBFREE Features
the DC current gain for this device is 40 @ 10mA 350mV the vce saturation(Max) is 500mV @ 10mA, 100mA a transition frequency of 500MHz
2N2369A PBFREE Applications
There are a lot of Central Semiconductor Corp 2N2369A PBFREE applications of single BJT transistors.