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2SB1197KT146R

2SB1197KT146R

2SB1197KT146R

ROHM Semiconductor

2SB1197KT146R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SB1197KT146R Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 7 Weeks
Contact PlatingCopper, Silver, Tin
Mount Surface Mount
Package / Case SMD/SMT
Number of Pins 3
PackagingTape & Reel (TR)
Published 2004
JESD-609 Code e1
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Operating Temperature150°C
Min Operating Temperature -55°C
HTS Code8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC -32V
Max Power Dissipation200mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-800mA
[email protected] Reflow Temperature-Max (s) 10
Pin Count3
Number of Elements 1
Polarity PNP
Element ConfigurationSingle
Transistor Application AMPLIFIER
Gain Bandwidth Product200MHz
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 800mA
Collector Emitter Breakdown Voltage32V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage-500mV
Max Breakdown Voltage 32V
Collector Base Voltage (VCBO) -40V
Emitter Base Voltage (VEBO) -5V
hFE Min 120
DC Current Gain-Min (hFE) 180
Continuous Collector Current -800mA
VCEsat-Max 0.5 V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:19164 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.043411$0.043411
500$0.031920$15.96
1000$0.026600$26.6
2000$0.024404$48.808
5000$0.022807$114.035
10000$0.021216$212.16
15000$0.020518$307.77
50000$0.020175$1008.75

2SB1197KT146R Product Details

2SB1197KT146R Overview


This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.Continuous collector voltages should be kept at -800mA to achieve high efficiency.Keeping the emitter base voltage at -5V can result in a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -800mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.This device can take an input voltage of 32V volts before it breaks down.Maximum collector currents can be below 800mA volts.

2SB1197KT146R Features


a collector emitter saturation voltage of -500mV
the emitter base voltage is kept at -5V
the current rating of this device is -800mA
a transition frequency of 200MHz

2SB1197KT146R Applications


There are a lot of ROHM Semiconductor 2SB1197KT146R applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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