2SB1197KT146R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
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2SB1197KT146R Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
7 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Package / Case
SMD/SMT
Number of Pins
3
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
HTS Code
8541.21.00.75
Subcategory
Other Transistors
Voltage - Rated DC
-32V
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-800mA
[email protected] Reflow Temperature-Max (s)
10
Pin Count
3
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Transistor Application
AMPLIFIER
Gain Bandwidth Product
200MHz
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
800mA
Collector Emitter Breakdown Voltage
32V
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
-500mV
Max Breakdown Voltage
32V
Collector Base Voltage (VCBO)
-40V
Emitter Base Voltage (VEBO)
-5V
hFE Min
120
DC Current Gain-Min (hFE)
180
Continuous Collector Current
-800mA
VCEsat-Max
0.5 V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.043411
$0.043411
500
$0.031920
$15.96
1000
$0.026600
$26.6
2000
$0.024404
$48.808
5000
$0.022807
$114.035
10000
$0.021216
$212.16
15000
$0.020518
$307.77
50000
$0.020175
$1008.75
2SB1197KT146R Product Details
2SB1197KT146R Overview
This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.Continuous collector voltages should be kept at -800mA to achieve high efficiency.Keeping the emitter base voltage at -5V can result in a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -800mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.This device can take an input voltage of 32V volts before it breaks down.Maximum collector currents can be below 800mA volts.
2SB1197KT146R Features
a collector emitter saturation voltage of -500mV the emitter base voltage is kept at -5V the current rating of this device is -800mA a transition frequency of 200MHz
2SB1197KT146R Applications
There are a lot of ROHM Semiconductor 2SB1197KT146R applications of single BJT transistors.