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JAN2N3439

JAN2N3439

JAN2N3439

Microsemi Corporation

JAN2N3439 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N3439 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/368
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Max Power Dissipation 800mW
Terminal Position BOTTOM
Terminal Form WIRE
Frequency 40MHz
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 800mW
Case Connection COLLECTOR
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 350V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 20mA 10V
Current - Collector Cutoff (Max) 2μA
Vce Saturation (Max) @ Ib, Ic 500mV @ 4mA, 50mA
Collector Emitter Breakdown Voltage 350V
Transition Frequency 15MHz
Collector Base Voltage (VCBO) 450V
Emitter Base Voltage (VEBO) 7V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $11.294000 $11.294
10 $10.654717 $106.54717
100 $10.051620 $1005.162
500 $9.482660 $4741.33
1000 $8.945906 $8945.906
JAN2N3439 Product Details

JAN2N3439 Overview


In this device, the DC current gain is 40 @ 20mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.When VCE saturation is 500mV @ 4mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 7V allows for a high level of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 15MHz.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

JAN2N3439 Features


the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 7V
a transition frequency of 15MHz

JAN2N3439 Applications


There are a lot of Microsemi Corporation JAN2N3439 applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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