JAN2N3439 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JAN2N3439 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
22 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/368
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Max Power Dissipation
800mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Frequency
40MHz
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
800mW
Case Connection
COLLECTOR
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
350V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 20mA 10V
Current - Collector Cutoff (Max)
2μA
Vce Saturation (Max) @ Ib, Ic
500mV @ 4mA, 50mA
Collector Emitter Breakdown Voltage
350V
Transition Frequency
15MHz
Collector Base Voltage (VCBO)
450V
Emitter Base Voltage (VEBO)
7V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$11.294000
$11.294
10
$10.654717
$106.54717
100
$10.051620
$1005.162
500
$9.482660
$4741.33
1000
$8.945906
$8945.906
JAN2N3439 Product Details
JAN2N3439 Overview
In this device, the DC current gain is 40 @ 20mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.When VCE saturation is 500mV @ 4mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 7V allows for a high level of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 15MHz.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
JAN2N3439 Features
the DC current gain for this device is 40 @ 20mA 10V the vce saturation(Max) is 500mV @ 4mA, 50mA the emitter base voltage is kept at 7V a transition frequency of 15MHz
JAN2N3439 Applications
There are a lot of Microsemi Corporation JAN2N3439 applications of single BJT transistors.