DXTN07060BFG-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DXTN07060BFG-7 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Matte Tin (Sn)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
900mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 2V
Current - Collector Cutoff (Max)
20nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
3A
Frequency - Transition
175MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.479000
$0.479
10
$0.451887
$4.51887
100
$0.426308
$42.6308
500
$0.402178
$201.089
1000
$0.379413
$379.413
DXTN07060BFG-7 Product Details
DXTN07060BFG-7 Overview
This device has a DC current gain of 100 @ 500mA 2V, which is the ratio between the collector current and the base current.A VCE saturation (Max) of 500mV @ 300mA, 3A means Ic has reached its maximum value(saturated).Collector Emitter Breakdown occurs at 60VV - Maximum voltage.
DXTN07060BFG-7 Features
the DC current gain for this device is 100 @ 500mA 2V the vce saturation(Max) is 500mV @ 300mA, 3A
DXTN07060BFG-7 Applications
There are a lot of Diodes Incorporated DXTN07060BFG-7 applications of single BJT transistors.