BC546A B1G

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Manufacturer part number:BC546A B1G

Manufacturer:Taiwan Semiconductor Corporation

Description:BC546A B1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website

Case Package:SOT-23

Datasheet:BC546A B1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package	TO-92
Operating Temperature	-65°C~150°C TJ
Packaging	Bulk
Published	2017
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Power - Max	500mW
Transistor Type	NPN
DC Current Gain (hFE) (Min) @ Ic, Vce	110 @ 2mA 5V
Current - Collector Cutoff (Max)	15nA ICBO
Voltage - Collector Emitter Breakdown (Max)	65V
Current - Collector (Ic) (Max)	100mA
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$0.305000	$0.305
10	$0.287736	$2.87736
100	$0.271449	$27.1449
500	$0.256084	$128.042
1000	$0.241589	$241.589

BC546A B1G Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 110 @ 2mA 5V.There is no device package available from the supplier for this product.Collector Emitter Breakdown occurs at 65VV - Maximum voltage.