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MJE2955TG

MJE2955TG

MJE2955TG

ON Semiconductor

MJE2955TG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJE2955TG Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Contact PlatingTin
Mounting Type Through Hole
Package / Case TO-220-3
Surface MountNO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2003
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation75W
Peak Reflow Temperature (Cel) 260
Current Rating-10A
Frequency 2MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MJE2955
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation75W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product2MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A 4V
Current - Collector Cutoff (Max) 700μA
Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A
Collector Emitter Breakdown Voltage60V
Transition Frequency 2MHz
Collector Emitter Saturation Voltage1.1V
Collector Base Voltage (VCBO) 70V
Emitter Base Voltage (VEBO) 5V
hFE Min 20
Height 9.28mm
Length 10.28mm
Width 4.82mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:5767 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.97000$0.97
50$0.80140$40.07
100$0.65400$65.4
500$0.51702$258.51

MJE2955TG Product Details

MJE2955TG Overview


This device has a DC current gain of 20 @ 4A 4V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is 1.1V, which allows for maximum design flexibility.When VCE saturation is 8V @ 3.3A, 10A, transistor means Ic has reached transistors maximum value (saturated).An emitter's base voltage can be kept at 5V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.As a result, the part has a transition frequency of 2MHz.The maximum collector current is 10A volts.

MJE2955TG Features


the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 2MHz

MJE2955TG Applications


There are a lot of ON Semiconductor MJE2955TG applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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