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BCW68HR

BCW68HR

BCW68HR

Nexperia USA Inc.

BCW68HR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BCW68HR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Pin Count 3
Power - Max 250mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA 1V
Current - Collector Cutoff (Max) 5μA ICBO
Vce Saturation (Max) @ Ib, Ic 450mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 800mA
Frequency - Transition 80MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.03162 $0.09486
BCW68HR Product Details

BCW68HR Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 250 @ 100mA 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 450mV @ 50mA, 500mA.Single BJT transistor shows a 45V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

BCW68HR Features


the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 450mV @ 50mA, 500mA

BCW68HR Applications


There are a lot of Nexperia USA Inc. BCW68HR applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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