BD242BG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD242BG Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2001
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
LEADFORM OPTIONS ARE AVAILABLE
Subcategory
Other Transistors
Voltage - Rated DC
-80V
Max Power Dissipation
40W
Peak Reflow Temperature (Cel)
260
Current Rating
-3A
Frequency
3MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BD242
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
40mW
Case Connection
COLLECTOR
Power - Max
40W
Transistor Application
SWITCHING
Gain Bandwidth Product
3MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 1A 4V
Current - Collector Cutoff (Max)
300μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1.2V @ 600mA, 3A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
3MHz
Collector Emitter Saturation Voltage
1.2V
Collector Base Voltage (VCBO)
115V
Emitter Base Voltage (VEBO)
5V
hFE Min
25
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.309274
$2.309274
10
$2.178560
$21.7856
100
$2.055245
$205.5245
500
$1.938911
$969.4555
1000
$1.829161
$1829.161
BD242BG Product Details
BD242BG Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 25 @ 1A 4V DC current gain.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -3A.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
BD242BG Features
the DC current gain for this device is 25 @ 1A 4V a collector emitter saturation voltage of 1.2V the vce saturation(Max) is 1.2V @ 600mA, 3A the emitter base voltage is kept at 5V the current rating of this device is -3A a transition frequency of 3MHz
BD242BG Applications
There are a lot of ON Semiconductor BD242BG applications of single BJT transistors.