2SA2097(TE16L1,NQ) Overview

DC current gain in this device equals 200 @ 500mA 2V, which is the ratio of the base current to the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 270mV @ 53mA, 1.6A.With the emitter base voltage set at 7V, an efficient operation can be achieved.Collector current can be as low as 5A volts at its maximum.

2SA2097(TE16L1,NQ) Features

the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 270mV @ 53mA, 1.6A
the emitter base voltage is kept at 7V

2SA2097(TE16L1,NQ) Applications

There are a lot of Toshiba Semiconductor and Storage 2SA2097(TE16L1,NQ) applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver