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BC307BRL1G

BC307BRL1G

BC307BRL1G

ON Semiconductor

BC307BRL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BC307BRL1G Datasheet

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Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 hours ago)
Contact Plating Copper, Silver, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC -45V
Max Power Dissipation 350mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating -100mA
Frequency 280MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BC307
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 350mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 280MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 280MHz
Collector Emitter Saturation Voltage -300mV
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
hFE Min 200
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.09000 $0.09
500 $0.0891 $44.55
1000 $0.0882 $88.2
1500 $0.0873 $130.95
2000 $0.0864 $172.8
2500 $0.0855 $213.75
BC307BRL1G Product Details

BC307BRL1G Overview


In this device, the DC current gain is 200 @ 2mA 5V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -300mV, which allows for maximum design flexibility.When VCE saturation is 250mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 5V can result in a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -100mA.In the part, the transition frequency is 280MHz.As a result, it can handle voltages as low as 45V volts.A maximum collector current of 100mA volts can be achieved.

BC307BRL1G Features


the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 250mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 280MHz

BC307BRL1G Applications


There are a lot of ON Semiconductor BC307BRL1G applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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