MMBT4403LT3G Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -750mV allows maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As a result, the part has a transition frequency of 200MHz.Single BJT transistor can be broken down at a voltage of 40V volts.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.
MMBT4403LT3G Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 600mA
a transition frequency of 200MHz
MMBT4403LT3G Applications
There are a lot of ON Semiconductor MMBT4403LT3G applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
