BSP32,115 Overview

DC current gain in this device equals 40 @ 100mA 5V, which is the ratio of the base current to the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.There is a transition frequency of 100MHz in the part.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

BSP32,115 Features

the DC current gain for this device is 40 @ 100mA 5V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BSP32,115 Applications

There are a lot of Nexperia USA Inc. BSP32,115 applications of single BJT transistors.

• Inverter
• Driver
• Interface
• Muting