BSS63,215 Overview

DC current gain in this device equals 30 @ 25mA 1V, which is the ratio of the base current to the collector current.A VCE saturation (Max) of 250mV @ 2.5mA, 25mA means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 6V can result in a high level of efficiency.In this part, there is a transition frequency of 85MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 100mA volts is possible.

BSS63,215 Features

the DC current gain for this device is 30 @ 25mA 1V
the vce saturation(Max) is 250mV @ 2.5mA, 25mA
the emitter base voltage is kept at 6V
a transition frequency of 85MHz

BSS63,215 Applications

There are a lot of Nexperia USA Inc. BSS63,215 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting