BSP52T3G Overview

This device has a DC current gain of 2000 @ 500mA 10V, which is the ratio between the collector current and the base current.With a collector emitter saturation voltage of 1.3V, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The breakdown input voltage is 80V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

BSP52T3G Features

the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.3V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A

BSP52T3G Applications

There are a lot of ON Semiconductor BSP52T3G applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting