2STF2550 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
2STF2550 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Cut Tape (CT)
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
1.4W
Terminal Position
SINGLE
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
2STF25
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
1.4W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
110 @ 2A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
550mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
-50V
Max Breakdown Voltage
50V
Emitter Base Voltage (VEBO)
5V
hFE Min
70
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,500
$0.17266
$0.34532
5,000
$0.16269
$0.81345
12,500
$0.15271
$1.83252
25,000
$0.15105
$3.77625
2STF2550 Product Details
2STF2550 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 110 @ 2A 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.
2STF2550 Features
the DC current gain for this device is 110 @ 2A 2V the vce saturation(Max) is 550mV @ 300mA, 3A the emitter base voltage is kept at 5V
2STF2550 Applications
There are a lot of STMicroelectronics 2STF2550 applications of single BJT transistors.