BST39,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
BST39,115 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Supplier Device Package
SOT-89
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Series
Automotive, AEC-Q101
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BST39
Polarity
NPN
Power Dissipation
1.3W
Power - Max
1.3W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 20mA 10V
Current - Collector Cutoff (Max)
20nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 4mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
350V
Current - Collector (Ic) (Max)
100mA
Frequency - Transition
70MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.090560
$0.09056
500
$0.066588
$33.294
1000
$0.055490
$55.49
2000
$0.050908
$101.816
5000
$0.047578
$237.89
10000
$0.044259
$442.59
15000
$0.042803
$642.045
50000
$0.042088
$2104.4
BST39,115 Product Details
BST39,115 Overview
This device has a DC current gain of 40 @ 20mA 10V, which is the ratio between the collector current and the base current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 4mA, 50mA.Supplier device package SOT-89 comes with the product.A 350V maximal voltage - Collector Emitter Breakdown is present in the device.
BST39,115 Features
the DC current gain for this device is 40 @ 20mA 10V the vce saturation(Max) is 500mV @ 4mA, 50mA the supplier device package of SOT-89
BST39,115 Applications
There are a lot of Nexperia USA Inc. BST39,115 applications of single BJT transistors.