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BST39,115

BST39,115

BST39,115

Nexperia USA Inc.

BST39,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BST39,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Supplier Device Package SOT-89
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BST39
Polarity NPN
Power Dissipation 1.3W
Power - Max 1.3W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 20mA 10V
Current - Collector Cutoff (Max) 20nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 4mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 350V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 70MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.090560 $0.09056
500 $0.066588 $33.294
1000 $0.055490 $55.49
2000 $0.050908 $101.816
5000 $0.047578 $237.89
10000 $0.044259 $442.59
15000 $0.042803 $642.045
50000 $0.042088 $2104.4
BST39,115 Product Details

BST39,115 Overview


This device has a DC current gain of 40 @ 20mA 10V, which is the ratio between the collector current and the base current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 4mA, 50mA.Supplier device package SOT-89 comes with the product.A 350V maximal voltage - Collector Emitter Breakdown is present in the device.

BST39,115 Features


the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the supplier device package of SOT-89

BST39,115 Applications


There are a lot of Nexperia USA Inc. BST39,115 applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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