MMBT5087LT3G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 100μA 5V.This design offers maximum flexibility with a collector emitter saturation voltage of -300mV.A VCE saturation (Max) of 300mV @ 1mA, 10mA means Ic has reached its maximum value(saturated).The base voltage of the emitter can be kept at 3V to achieve high efficiency.This device has a current rating of -50mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.There is a transition frequency of 40MHz in the part.Single BJT transistor is possible for the collector current to fall as low as 50mA volts at Single BJT transistors maximum.
MMBT5087LT3G Features
the DC current gain for this device is 250 @ 100μA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 3V
the current rating of this device is -50mA
a transition frequency of 40MHz
MMBT5087LT3G Applications
There are a lot of ON Semiconductor MMBT5087LT3G applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
