BCP55 Overview

In this device, the DC current gain is 40 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.The current rating of this fuse is 1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor can take a breakdown input voltage of 60V volts.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.

BCP55 Features

the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A

BCP55 Applications

There are a lot of ON Semiconductor BCP55 applications of single BJT transistors.

• Muting
• Inverter
• Driver
• Interface