PBSS5580PA,115 Overview

DC current gain in this device equals 140 @ 2A 2V, which is the ratio of the base current to the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).If the emitter base voltage is kept at -7V, a high level of efficiency can be achieved.As a result, the part has a transition frequency of 110MHz.Single BJT transistor can be broken down at a voltage of 80V volts.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.

PBSS5580PA,115 Features

the DC current gain for this device is 140 @ 2A 2V
the vce saturation(Max) is 420mV @ 200mA, 4A
the emitter base voltage is kept at -7V
a transition frequency of 110MHz

PBSS5580PA,115 Applications

There are a lot of Nexperia USA Inc. PBSS5580PA,115 applications of single BJT transistors.

• Driver
• Muting
• Interface
• Inverter