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BUK9M12-60EX

BUK9M12-60EX

BUK9M12-60EX

Nexperia USA Inc.

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 11m Ω @ 15A, 10V ±10V 2769pF @ 25V 60V SOT-1210, 8-LFPAK33

SOT-23

BUK9M12-60EX Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-1210, 8-LFPAK33
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, TrenchMOS™
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 8
Reference Standard AEC-Q101; IEC-60134
JESD-30 Code R-PSSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 79W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2769pF @ 25V
Current - Continuous Drain (Id) @ 25°C 54A Tc
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±10V
Continuous Drain Current (ID) 54A
Drain-source On Resistance-Max 0.012Ohm
Pulsed Drain Current-Max (IDM) 216A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 50.5 mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,500 $0.34989 $0.34989
3,000 $0.31709 $0.95127
7,500 $0.29522 $2.06654
10,500 $0.28428 $2.8428
BUK9M12-60EX Product Details

BUK9M12-60EX Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 50.5 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2769pF @ 25V.This device conducts a continuous drain current (ID) of 54A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 216A.A normal operation of the DS requires keeping the breakdown voltage above 60V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 5V volts (5V).

BUK9M12-60EX Features


the avalanche energy rating (Eas) is 50.5 mJ
a continuous drain current (ID) of 54A
based on its rated peak drain current 216A.
a 60V drain to source voltage (Vdss)


BUK9M12-60EX Applications


There are a lot of Nexperia USA Inc.
BUK9M12-60EX applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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