SMMBT2222AWT1G Overview

This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 1V allows maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 50mA, 500mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In this part, there is a transition frequency of 300MHz.The maximum collector current is 600mA volts.

SMMBT2222AWT1G Features

the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz

SMMBT2222AWT1G Applications

There are a lot of ON Semiconductor SMMBT2222AWT1G applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter