NSV40200UW6T1G Overview
This device has a DC current gain of 150 @ 1A 2V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 20mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.During maximum operation, collector current can be as low as 2A volts.
NSV40200UW6T1G Features
the DC current gain for this device is 150 @ 1A 2V
the vce saturation(Max) is 300mV @ 20mA, 2A
the emitter base voltage is kept at 7V
NSV40200UW6T1G Applications
There are a lot of ON Semiconductor NSV40200UW6T1G applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
