ZXT11N15DFTA Overview

This device has a DC current gain of 300 @ 200mA 2V, which is the ratio between the collector current and the base current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 110mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 150mV @ 150mA, 3A.A 3A continuous collector voltage is necessary to achieve high efficiency.Keeping the emitter base voltage at 7.5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3.3A).As a result, the part has a transition frequency of 145MHz.Breakdown input voltage is 15V volts.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.

ZXT11N15DFTA Features

the DC current gain for this device is 300 @ 200mA 2V
a collector emitter saturation voltage of 110mV
the vce saturation(Max) is 150mV @ 150mA, 3A
the emitter base voltage is kept at 7.5V
the current rating of this device is 3.3A
a transition frequency of 145MHz

ZXT11N15DFTA Applications

There are a lot of Diodes Incorporated ZXT11N15DFTA applications of single BJT transistors.

• Inverter
• Driver
• Interface
• Muting