APT13003NZTR-G1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
APT13003NZTR-G1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Box (TB)
Published
2015
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
O-PBCY-W3
Number of Elements
1
Configuration
SINGLE
Power - Max
1W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400mV
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
5 @ 1A 2V
Vce Saturation (Max) @ Ib, Ic
400mV @ 250mA, 1A
Collector Emitter Breakdown Voltage
900V
Transition Frequency
4MHz
Max Breakdown Voltage
900V
Frequency - Transition
4MHz
Turn On Time-Max (ton)
4500ns
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.073043
$0.073043
500
$0.053708
$26.854
1000
$0.044757
$44.757
2000
$0.041061
$82.122
5000
$0.038375
$191.875
10000
$0.035698
$356.98
15000
$0.034524
$517.86
50000
$0.033947
$1697.35
APT13003NZTR-G1 Product Details
APT13003NZTR-G1 Overview
This device has a DC current gain of 5 @ 1A 2V, which is the ratio between the collector current and the base current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 250mA, 1A.The part has a transition frequency of 4MHz.Breakdown input voltage is 900V volts.Collector current can be as low as 1.5A volts at its maximum.
APT13003NZTR-G1 Features
the DC current gain for this device is 5 @ 1A 2V the vce saturation(Max) is 400mV @ 250mA, 1A a transition frequency of 4MHz
APT13003NZTR-G1 Applications
There are a lot of Diodes Incorporated APT13003NZTR-G1 applications of single BJT transistors.