BD241CG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD241CG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2010
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
LEADFORM OPTIONS ARE AVAILABLE
Subcategory
Other Transistors
Voltage - Rated DC
100V
Max Power Dissipation
40W
Peak Reflow Temperature (Cel)
260
Current Rating
3A
Frequency
3MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BD241
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
40mW
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
3MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 1A 4V
Current - Collector Cutoff (Max)
300μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1.2V @ 600mA, 3A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
3MHz
Collector Emitter Saturation Voltage
1.2V
Collector Base Voltage (VCBO)
90V
Emitter Base Voltage (VEBO)
5V
hFE Min
25
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.265979
$0.265979
10
$0.250923
$2.50923
100
$0.236720
$23.672
500
$0.223321
$111.6605
1000
$0.210680
$210.68
BD241CG Product Details
BD241CG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 1A 4V.With a collector emitter saturation voltage of 1.2V, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Parts of this part have transition frequencies of 3MHz.A maximum collector current of 3A volts can be achieved.
BD241CG Features
the DC current gain for this device is 25 @ 1A 4V a collector emitter saturation voltage of 1.2V the vce saturation(Max) is 1.2V @ 600mA, 3A the emitter base voltage is kept at 5V the current rating of this device is 3A a transition frequency of 3MHz
BD241CG Applications
There are a lot of ON Semiconductor BD241CG applications of single BJT transistors.