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BD241CG

BD241CG

BD241CG

ON Semiconductor

BD241CG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD241CG Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact PlatingTin
Mounting Type Through Hole
Package / Case TO-220-3
Surface MountNO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional FeatureLEADFORM OPTIONS ARE AVAILABLE
Subcategory Other Transistors
Voltage - Rated DC 100V
Max Power Dissipation40W
Peak Reflow Temperature (Cel) 260
Current Rating3A
Frequency 3MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BD241
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation40mW
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product3MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A 4V
Current - Collector Cutoff (Max) 300μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1.2V @ 600mA, 3A
Collector Emitter Breakdown Voltage100V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage1.2V
Collector Base Voltage (VCBO) 90V
Emitter Base Voltage (VEBO) 5V
hFE Min 25
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:7202 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.265979$0.265979
10$0.250923$2.50923
100$0.236720$23.672
500$0.223321$111.6605
1000$0.210680$210.68

BD241CG Product Details

BD241CG Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 1A 4V.With a collector emitter saturation voltage of 1.2V, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Parts of this part have transition frequencies of 3MHz.A maximum collector current of 3A volts can be achieved.

BD241CG Features


the DC current gain for this device is 25 @ 1A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 600mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz

BD241CG Applications


There are a lot of ON Semiconductor BD241CG applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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