PBSS304ND,115 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 240 @ 500mA 2V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 505mV @ 600mA, 6A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.There is a transition frequency of 140MHz in the part.As a result, it can handle voltages as low as 80V volts.A maximum collector current of 3A volts is possible.

PBSS304ND,115 Features

the DC current gain for this device is 240 @ 500mA 2V
the vce saturation(Max) is 505mV @ 600mA, 6A
the emitter base voltage is kept at 5V
a transition frequency of 140MHz

PBSS304ND,115 Applications

There are a lot of Nexperia USA Inc. PBSS304ND,115 applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter