PBSS4021NX,115 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 250 @ 4A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 210mV @ 350mA, 7A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.There is a breakdown input voltage of 20V volts that it can take.In extreme cases, the collector current can be as low as 7A volts.

PBSS4021NX,115 Features

the DC current gain for this device is 250 @ 4A 2V
the vce saturation(Max) is 210mV @ 350mA, 7A
the emitter base voltage is kept at 5V

PBSS4021NX,115 Applications

There are a lot of Nexperia USA Inc. PBSS4021NX,115 applications of single BJT transistors.

• Muting
• Interface
• Driver
• Inverter