PBSS4021NX,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBSS4021NX,115 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Tin (Sn)
Max Power Dissipation
2.5W
Frequency
115MHz
Base Part Number
PBSS4021N
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
2.5W
Gain Bandwidth Product
115MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
7A
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 4A 2V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
210mV @ 350mA, 7A
Collector Emitter Breakdown Voltage
20V
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
20V
Emitter Base Voltage (VEBO)
5V
hFE Min
300
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$0.32375
$0.32375
2,000
$0.29750
$0.595
5,000
$0.28875
$1.44375
PBSS4021NX,115 Product Details
PBSS4021NX,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 250 @ 4A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 210mV @ 350mA, 7A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.There is a breakdown input voltage of 20V volts that it can take.In extreme cases, the collector current can be as low as 7A volts.
PBSS4021NX,115 Features
the DC current gain for this device is 250 @ 4A 2V the vce saturation(Max) is 210mV @ 350mA, 7A the emitter base voltage is kept at 5V
PBSS4021NX,115 Applications
There are a lot of Nexperia USA Inc. PBSS4021NX,115 applications of single BJT transistors.