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NJVMJD47T4G

NJVMJD47T4G

NJVMJD47T4G

ON Semiconductor

NJVMJD47T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NJVMJD47T4G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 1.56W
Terminal Form GULL WING
Base Part Number MJD47
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Power - Max 1.56W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 250V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 300mA 10V
Current - Collector Cutoff (Max) 200μA
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 1A
Collector Emitter Breakdown Voltage 250V
Transition Frequency 10MHz
Collector Emitter Saturation Voltage 1V
Frequency - Transition 10MHz
Collector Base Voltage (VCBO) 350V
Emitter Base Voltage (VEBO) 5V
Height 2.38mm
Length 6.22mm
Width 6.73mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.23233 $0.46466
5,000 $0.21631 $1.08155
12,500 $0.21364 $2.56368
NJVMJD47T4G Product Details

NJVMJD47T4G Overview


In this device, the DC current gain is 30 @ 300mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.When VCE saturation is 1V @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.The part has a transition frequency of 10MHz.The maximum collector current is 1A volts.

NJVMJD47T4G Features


the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 10MHz

NJVMJD47T4G Applications


There are a lot of ON Semiconductor NJVMJD47T4G applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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