NJVMJD47T4G Overview
In this device, the DC current gain is 30 @ 300mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.When VCE saturation is 1V @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.The part has a transition frequency of 10MHz.The maximum collector current is 1A volts.
NJVMJD47T4G Features
the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 10MHz
NJVMJD47T4G Applications
There are a lot of ON Semiconductor NJVMJD47T4G applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
