2SAR523EBTL Overview
In this device, the DC current gain is 120 @ 1mA 6V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of -150mV, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 50mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.Parts of this part have transition frequencies of 300MHz.A breakdown input voltage of 50V volts can be used.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
2SAR523EBTL Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 300MHz
2SAR523EBTL Applications
There are a lot of ROHM Semiconductor 2SAR523EBTL applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
