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2SAR523EBTL

2SAR523EBTL

2SAR523EBTL

ROHM Semiconductor

2SAR523EBTL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SAR523EBTL Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-89, SOT-490
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 10
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power - Max 150mW
Transistor Application SWITCHING
Gain Bandwidth Product 300MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 300MHz
Collector Emitter Saturation Voltage -150mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) -50V
Emitter Base Voltage (VEBO) -5V
hFE Min 120
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.023256 $0.023256
500 $0.017100 $8.55
1000 $0.014250 $14.25
2000 $0.013073 $26.146
5000 $0.012218 $61.09
10000 $0.011366 $113.66
15000 $0.010992 $164.88
50000 $0.010808 $540.4
2SAR523EBTL Product Details

2SAR523EBTL Overview


In this device, the DC current gain is 120 @ 1mA 6V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of -150mV, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 50mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.Parts of this part have transition frequencies of 300MHz.A breakdown input voltage of 50V volts can be used.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.

2SAR523EBTL Features


the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 300MHz

2SAR523EBTL Applications


There are a lot of ROHM Semiconductor 2SAR523EBTL applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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