MJ11021G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MJ11021G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Surface Mount
NO
Number of Pins
2
Weight
6.40101g
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Tray
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-250V
Max Power Dissipation
175W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Peak Reflow Temperature (Cel)
260
Current Rating
-15A
[email protected] Reflow Temperature-Max (s)
40
Pin Count
2
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
150W
Case Connection
COLLECTOR
Power - Max
175W
Transistor Application
SWITCHING
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
250V
Max Collector Current
15A
DC Current Gain (hFE) (Min) @ Ic, Vce
400 @ 10A 5V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
3.4V @ 150mA, 15A
Collector Emitter Breakdown Voltage
250V
Transition Frequency
6MHz
Collector Emitter Saturation Voltage
2V
Collector Base Voltage (VCBO)
250V
Emitter Base Voltage (VEBO)
50V
hFE Min
100
Height
8.51mm
Length
39.37mm
Width
26.67mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$7.35000
$7.35
10
$6.63900
$66.39
100
$5.49620
$549.62
500
$4.78598
$2392.99
MJ11021G Product Details
MJ11021G Overview
In this device, the DC current gain is 400 @ 10A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).If the emitter base voltage is kept at 50V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -15A.6MHz is present in the transition frequency.The maximum collector current is 15A volts.
MJ11021G Features
the DC current gain for this device is 400 @ 10A 5V a collector emitter saturation voltage of 2V the vce saturation(Max) is 3.4V @ 150mA, 15A the emitter base voltage is kept at 50V the current rating of this device is -15A a transition frequency of 6MHz
MJ11021G Applications
There are a lot of ON Semiconductor MJ11021G applications of single BJT transistors.