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MJ11021G

MJ11021G

MJ11021G

ON Semiconductor

MJ11021G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJ11021G Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Surface MountNO
Number of Pins 2
Weight 6.40101g
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingTray
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -250V
Max Power Dissipation175W
Terminal Position BOTTOM
Terminal FormPIN/PEG
Peak Reflow Temperature (Cel) 260
Current Rating-15A
[email protected] Reflow Temperature-Max (s) 40
Pin Count2
Number of Elements 1
Polarity PNP
Element ConfigurationSingle
Power Dissipation150W
Case Connection COLLECTOR
Power - Max 175W
Transistor Application SWITCHING
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 250V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 400 @ 10A 5V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 3.4V @ 150mA, 15A
Collector Emitter Breakdown Voltage250V
Transition Frequency 6MHz
Collector Emitter Saturation Voltage2V
Collector Base Voltage (VCBO) 250V
Emitter Base Voltage (VEBO) 50V
hFE Min 100
Height 8.51mm
Length 39.37mm
Width 26.67mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:739 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$7.35000$7.35
10$6.63900$66.39
100$5.49620$549.62
500$4.78598$2392.99

MJ11021G Product Details

MJ11021G Overview


In this device, the DC current gain is 400 @ 10A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).If the emitter base voltage is kept at 50V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -15A.6MHz is present in the transition frequency.The maximum collector current is 15A volts.

MJ11021G Features


the DC current gain for this device is 400 @ 10A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3.4V @ 150mA, 15A
the emitter base voltage is kept at 50V
the current rating of this device is -15A
a transition frequency of 6MHz

MJ11021G Applications


There are a lot of ON Semiconductor MJ11021G applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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