PBSS4130QAZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBSS4130QAZ Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
3-XDFN Exposed Pad
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2013
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Power - Max
325mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 1A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
245mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
1A
Frequency - Transition
190MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
PBSS4130QAZ Product Details
PBSS4130QAZ Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 180 @ 1A 2V DC current gain.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 245mV @ 50mA, 1A.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
PBSS4130QAZ Features
the DC current gain for this device is 180 @ 1A 2V the vce saturation(Max) is 245mV @ 50mA, 1A
PBSS4130QAZ Applications
There are a lot of Nexperia USA Inc. PBSS4130QAZ applications of single BJT transistors.