BC856BLT1G Overview
In this device, the DC current gain is 220 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This design offers maximum flexibility with a collector emitter saturation voltage of -650mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 5V can result in a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-100mA).100MHz is present in the transition frequency.Single BJT transistor can take a breakdown input voltage of 65V volts.A maximum collector current of 100mA volts can be achieved.
BC856BLT1G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC856BLT1G Applications
There are a lot of ON Semiconductor BC856BLT1G applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
