PBSS4220V,115 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 1A 2V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 350mV @ 200mA, 2A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 210MHz.The breakdown input voltage is 20V volts.In extreme cases, the collector current can be as low as 2A volts.

PBSS4220V,115 Features

the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 350mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 210MHz

PBSS4220V,115 Applications

There are a lot of Nexperia USA Inc. PBSS4220V,115 applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter