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PBSS4220V,115

PBSS4220V,115

PBSS4220V,115

Nexperia USA Inc.

PBSS4220V,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS4220V,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 900mW
Terminal Position DUAL
Terminal Form FLAT
Frequency 210MHz
Base Part Number PBSS4220
Pin Count 6
Number of Elements 1
Element Configuration Single
Power Dissipation 900mW
Transistor Application SWITCHING
Gain Bandwidth Product 210MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 350mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 20V
Transition Frequency 210MHz
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.473693 $0.473693
10 $0.446880 $4.4688
100 $0.421585 $42.1585
500 $0.397722 $198.861
1000 $0.375209 $375.209
PBSS4220V,115 Product Details

PBSS4220V,115 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 1A 2V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 350mV @ 200mA, 2A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 210MHz.The breakdown input voltage is 20V volts.In extreme cases, the collector current can be as low as 2A volts.

PBSS4220V,115 Features


the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 350mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 210MHz

PBSS4220V,115 Applications


There are a lot of Nexperia USA Inc. PBSS4220V,115 applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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