BC858CW-G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Comchip Technology stock available on our website
SOT-23
BC858CW-G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2013
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
TIN
Subcategory
Other Transistors
Max Power Dissipation
150mW
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
Configuration
Single
Power - Max
150mW
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
650mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
30V
Transition Frequency
100MHz
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.030055
$0.030055
500
$0.022099
$11.0495
1000
$0.018416
$18.416
2000
$0.016895
$33.79
5000
$0.015790
$78.95
10000
$0.014688
$146.88
15000
$0.014205
$213.075
50000
$0.013968
$698.4
BC858CW-G Product Details
BC858CW-G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 420 @ 2mA 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.The part has a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC858CW-G Features
the DC current gain for this device is 420 @ 2mA 5V the vce saturation(Max) is 650mV @ 5mA, 100mA a transition frequency of 100MHz
BC858CW-G Applications
There are a lot of Comchip Technology BC858CW-G applications of single BJT transistors.