NSVMMBT2222ATT1G Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 10V DC current gain.When VCE saturation is 1V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 6V allows for a high level of efficiency.Maximum collector currents can be below 600mA volts.

NSVMMBT2222ATT1G Features

the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V

NSVMMBT2222ATT1G Applications

There are a lot of ON Semiconductor NSVMMBT2222ATT1G applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver