2SA1162-O,LF Overview

DC current gain in this device equals 200 @ 2mA 6V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -300mV, giving you a wide variety of design options.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 10mA, 100mA.A constant collector voltage of -150mA is necessary for high efficiency.The emitter base voltage can be kept at -5V for high efficiency.There is a breakdown input voltage of 50V volts that it can take.A maximum collector current of 150mA volts can be achieved.

2SA1162-O,LF Features

the DC current gain for this device is 200 @ 2mA 6V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V

2SA1162-O,LF Applications

There are a lot of Toshiba Semiconductor and Storage 2SA1162-O,LF applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter