PBSS5130QAZ Overview

DC current gain in this device equals 130 @ 1A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 240mV @ 100mA, 1A.Detection of Collector Emitter Breakdown at 30V maximal voltage is present.

PBSS5130QAZ Features

the DC current gain for this device is 130 @ 1A 2V
the vce saturation(Max) is 240mV @ 100mA, 1A

PBSS5130QAZ Applications

There are a lot of Nexperia USA Inc. PBSS5130QAZ applications of single BJT transistors.

• Inverter
• Muting
• Driver
• Interface