PBSS5330PASX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBSS5330PASX Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-UDFN Exposed Pad
Transistor Element Material
SILICON
Operating Temperature
175°C TJ
Packaging
Cut Tape (CT)
Published
2014
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Max Power Dissipation
600mW
Terminal Position
DUAL
Terminal Form
NO LEAD
Pin Count
3
Reference Standard
AEC-Q101; IEC-60134
JESD-30 Code
S-PDSO-N3
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
600mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
320mV
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
175 @ 1A 2V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
320mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
30V
Transition Frequency
165MHz
Max Breakdown Voltage
30V
Frequency - Transition
165MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
PBSS5330PASX Product Details
PBSS5330PASX Overview
In this device, the DC current gain is 175 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 320mV @ 300mA, 3A.The part has a transition frequency of 165MHz.An input voltage of 30V volts is the breakdown voltage.In extreme cases, the collector current can be as low as 3A volts.
PBSS5330PASX Features
the DC current gain for this device is 175 @ 1A 2V the vce saturation(Max) is 320mV @ 300mA, 3A a transition frequency of 165MHz
PBSS5330PASX Applications
There are a lot of Nexperia USA Inc. PBSS5330PASX applications of single BJT transistors.