PMST4401,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PMST4401,135 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.21.00.75
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Element Configuration
Single
Transistor Application
SWITCHING
Gain Bandwidth Product
250MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 1V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
750mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
40V
Current - Collector (Ic) (Max)
600mA
Transition Frequency
250MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
VCEsat-Max
0.75 V
Turn Off Time-Max (toff)
255ns
Collector-Base Capacitance-Max
8pF
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.085440
$0.08544
500
$0.062824
$31.412
1000
$0.052353
$52.353
2000
$0.048030
$96.06
5000
$0.044888
$224.44
10000
$0.041756
$417.56
15000
$0.040383
$605.745
50000
$0.039708
$1985.4
PMST4401,135 Product Details
PMST4401,135 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 750mV @ 50mA, 500mA.Emitter base voltages of 6V can achieve high levels of efficiency.As you can see, the part has a transition frequency of 250MHz.A maximum collector current of 600mA volts can be achieved.
PMST4401,135 Features
the DC current gain for this device is 100 @ 150mA 1V the vce saturation(Max) is 750mV @ 50mA, 500mA the emitter base voltage is kept at 6V a transition frequency of 250MHz
PMST4401,135 Applications
There are a lot of Nexperia USA Inc. PMST4401,135 applications of single BJT transistors.