2SCR513P5T100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SCR513P5T100 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2016
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
500mW
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
500mW
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
350mV
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 50mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
350mV @ 25mA, 500mA
Collector Emitter Breakdown Voltage
50V
Max Breakdown Voltage
50V
Frequency - Transition
360MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.137160
$0.13716
10
$0.129396
$1.29396
100
$0.122072
$12.2072
500
$0.115162
$57.581
1000
$0.108644
$108.644
2SCR513P5T100 Product Details
2SCR513P5T100 Overview
In this device, the DC current gain is 180 @ 50mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Input voltage breakdown is available at 50V volts.During maximum operation, collector current can be as low as 1A volts.
2SCR513P5T100 Features
the DC current gain for this device is 180 @ 50mA 2V the vce saturation(Max) is 350mV @ 25mA, 500mA
2SCR513P5T100 Applications
There are a lot of ROHM Semiconductor 2SCR513P5T100 applications of single BJT transistors.