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2SCR513P5T100

2SCR513P5T100

2SCR513P5T100

ROHM Semiconductor

2SCR513P5T100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SCR513P5T100 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 500mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 500mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 350mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 50mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 350mV @ 25mA, 500mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 360MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.137160 $0.13716
10 $0.129396 $1.29396
100 $0.122072 $12.2072
500 $0.115162 $57.581
1000 $0.108644 $108.644
2SCR513P5T100 Product Details

2SCR513P5T100 Overview


In this device, the DC current gain is 180 @ 50mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Input voltage breakdown is available at 50V volts.During maximum operation, collector current can be as low as 1A volts.

2SCR513P5T100 Features


the DC current gain for this device is 180 @ 50mA 2V
the vce saturation(Max) is 350mV @ 25mA, 500mA

2SCR513P5T100 Applications


There are a lot of ROHM Semiconductor 2SCR513P5T100 applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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